Blank Cover Image

Optical Spectroscopy of Self-Assembled InP Quantum Dots Grown on GaP Using Gas-Source Molecular Beam Epitaxy

Author(s):
Publication title:
Semiconductor quantum dots II : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
642
Pub. Year:
2001
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995529 [1558995528]
Language:
English
Call no.:
M23500/642
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Optical properties and carrier dynamics of InP quantum dots embedded in GaP

Hatami, F., Schrottke, L., Tomm, J.W., Talalaev, V., Kristukat, C., Goni, A.R., Masselink, W.T.

SPIE - The International Society of Optical Engineering
7 Conference Proceedings A Study of Low-Temperature Grown GaP by Gas-Source Molecular Beam Epitaxy

Bi, W. G., Mei, X. B., Kavanagh, K. L., Tu, C. W., Stach, E. A., Hull, R.

MRS - Materials Research Society
2 Conference Proceedings Light-emitting diodes based on InP quantum dots in GaP(100)

Hatami, F., Lordi, V., Harris, J.S., Masselink, W.T.

SPIE - The International Society of Optical Engineering
8 Conference Proceedings Characterization of InGaN quantum wells grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source

Semendy, F., Li, L. K., Jurkovic, M. J., Wang, W. I.

MRS-Materials Research Society
3 Conference Proceedings Self-assembled InAs/Si quantum dot stacks grown by molecular beam epitaxy

Sharma,P.C., Tang,Y.S., Alt,K.W., Wang,K.L.

SPIE - The International Society for Optical Engineering
9 Conference Proceedings Size, areal density, and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy [6129-17]

Lin, J. C. C., Hogg, R A, Hopkinson, M., Fry, P W, Ross, I M, Cullis, A G, Kolodka, R S, Tartakovskii, A I, Skolnick, M …

SPIE - The International Society of Optical Engineering
4 Conference Proceedings InNAs and GainNAs Self-Assembled Quantum Dots and Lasers Grown by Solid Source Molecular Beam Epitaxy

Sun, Z.Z., Yoon, S.F., Yew, K.C., Bo, B.X.

Materials Research Society
10 Conference Proceedings Atomic Force Microscopy and Spectroscopy of Self-Assembled InAsSb Quantum Dots Grown on InP Substrates by MOCVD

Sin, Yongkun, Kim, Hyun I., Stupian, Gary W., Qiu, Yueming

Materials Research Society
5 Conference Proceedings Growth of Self-Assembled Quantum Dots, Quantum Rings, and Lateral Bi-Quantum- Dot Molecules by Gas-Source Molecular Beam Epitaxy

C. W. Tu, S. Suraprapapich, Y. Shen, Y. Fainman, S. Panyakeow

Electrochemical Society
11 Conference Proceedings CHARACTERIZATION OF InGaAs/InP EPITAXIAL LAYERS GROWN OVER V-GROOVE PATTERNED InP SUBSTRATES USING GAS SOURCE MOLECULAR BEAM EPITAXY

Bulitka, N. J., Gupta, A., Robinson, B. J., Thompson, D. A., Weatherly, G. C., Simmons, J. G.

MRS - Materials Research Society
6 Conference Proceedings Shape, Strain and Spatial Correlation of InP/In0.48Ga0.52P Quantum Dot Multilayers

Schmidbauer, M., Hatami, F., Schaefer, P., Hanke, M., Wiebach, Th., Niehus, H., Masselink, W. T., Koehler, R.

Materials Research Society
12 Conference Proceedings Optical Properties of Self-Assembled InAs Quantum Dots Grown on InAlAs/InP(001)

Salem, B., Benyattou, T., Guillot, G., Bremond, G., Brault, J., Gendry, M.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12