Quality of Thermally Grown Oxides in 4H-SiC Over Nitrogen or Phosphorus Implanted Regions

Quality of Thermally Grown Oxides in 4H-SiC Over Nitrogen or Phosphorus Implanted Regions

Author(s):

Publication title:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

640

Pub. Year:

2001

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

Language:

English

Call no.:

M23500/640

Type:

Conference Proceedings

Details

TDL ID:	ZA00014527
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon carbide-materials
Conf. info. (Number):	2000
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2000.11.27-2000.11.29

Similar Items:

1 Conference Proceedings High-Performance UMOSFETs in 4H-SiC Li, Y., Cooper, J.A., Jr., Capano, M.A. Trans Tech Publications	7 Conference Proceedings *SiC power electronic devices, MOSFETs and rectifiers Cooper, J. A., Ryu, S-H., Li, Y., Matin, M., Spitz, J., Morisette, D. T., McGlothlin, H. M., Das, M. K., Melloch, M. R., … MRS-Materials Research Society
2 Conference Proceedings High-Performance UMOSFETs in 4H-SiC Li, Y., Cooper J.A., Jr., Capano, M.A. Trans Tech Publications	8 Conference Proceedings Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration J. Senzaki, A. Shimozato, K. Fukuda, K. Arai Trans Tech Publications
3 Conference Proceedings Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide Capano, M. A., Cooper, J. A. Jr., Melloch, M. R., Saxler, A., Mitchel, W. C. Trans Tech Publications	9 Conference Proceedings Nitrogen Implantation Effects on Ultra-Thin Gate Oxide Grown on Nitrogen-Implanted Silicon Nam, I.-H., Hong, S.I., Sim, J.S., Park, B.-G., Lee, J.D., Lee, S.-W., Kang, M.-S., Kim, Y.-W., Suh, K.-P. Electrochemical Society
4 Conference Proceedings Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiC Matin, M., Saha, A., Cooper, J.A., Jr. Trans Tech Publications	10 Conference Proceedings Structural Defects and Critical Electric Field in 3C-SiC Capano, M.A., Smith, A.R., Kim, B.C., Kvam, E.P., Tsoi, S., Ramdas, A.K., Cooper, J.A. Trans Tech Publications
5 Conference Proceedings High-Voltage(2.6 kV)Lateral DMOSFETs in 4H-SiC Spitz,J., Melloch,M.R., J.A.Cooper,Jr, Capano,M.A. Trans Tech Publications	11 Conference Proceedings Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap Jones, K.A., Shah, P.B., Derenge, M.A., Ervin, M.H., Gerardi, G.J., Freitas, J.A.,Jr., Braga, G.C.B., Vispute, R.D., … Trans Tech Publications
6 Conference Proceedings High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching Saddow, S. E., Williams, J., Isaacs-Smith, T., Capano, M., Cooper, J. A., Mazzola, M. S., Hsieh, A. J., Casady, J. B. Trans Tech Publications	12 Conference Proceedings Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap Jones, K.A., Shah, P.B., Derenge, M.A., Ervin, M.H., Gerardi, G.J., Freitas, J.A., Jr., Braga, G.C.B., Vispute, R.D., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12