Cross-Sectional Cathodoluminescence Study in Ga-Polar and N-Polar GaN Epilayers
- Author(s):
Du, X. L. Lim, D. H. Xu, K. Liu, B.L. Jia, A. W. Takahashi, K. Yoshikawa, A. - Publication title:
- GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 639
- Pub. Year:
- 2001
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995499 [1558995498]
- Language:
- English
- Call no.:
- M23500/639
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
Trans Tech Publications |
Trans Tech Publications |
Kluwer Academic Publishers |
3
Conference Proceedings
High-Resolution X-ray-Diffraction Analysis of "Device-Quality" Cubic GaN Grown on (001)GaAs Substrate Prepared by Atomic-Hydrogen Treatment at High …
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |
4
Conference Proceedings
Modeling and Optimization of Cross-Sectional Microstructure Distribution during Hot Rolling of HSLA Steel Plates
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
5
Conference Proceedings
Ultrafast carrier dynamics in GaN epilayers studied by femtosecond pump-probe spectroscopy
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
12
Conference Proceedings
Study of the characteristic of the penalty function in point cloud data's smoothing based on anisotropic heat conduction principle
Society of Photo-optical Instrumentation Engineers |