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Effect of Fermi Level Position in Intrinsic a-Si:H on the Evolution of Defect States under Light Exposure

Author(s):
Publication title:
Amorphous and nanocrystalline silicon science and technology - 2005 : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
862
Pub. Year:
2005
Page(from):
469
Page(to):
474
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998155 [1558998152]
Language:
English
Call no.:
M23500/862
Type:
Conference Proceedings

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