Effects of N2O Fluence on the PECVD-Grown Si-Rich SiOx with Buried Si Nanocrystals

Effects of N2O Fluence on the PECVD-Grown Si-Rich SiOx with Buried Si Nanocrystals

Author(s):

Lin, Chun-Jung

Publication title:

Amorphous and nanocrystalline silicon science and technology - 2005 : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

862

Pub. Year:

2005

Page(from):

319

Page(to):

324

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998155 [1558998152]

Language:

English

Call no.:

M23500/862

Type:

Conference Proceedings

Details

TDL ID:	ZA00014506
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting
Conf. info. (Number):	2005
Conf. info. (Venue):	San Francisco, California, U.S.A.
Conf. info. (Date):	2005.03.28-2005.04.01

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