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Comparison of the Effect of Gate Dielectric Layer on 2DEG Carrier Concentration in Strained AlGaN/GaN Heterostructure

Author(s):
Wang, W.
Derluyn, J.
Germain, M.
Dewolf, I.
Leys, M.
Boeykens, S.
Degroote, S.
Ruythooren, W.
Das, J.
Schreurs, D.
Nauwelaers, B.
Borghs, G.
7 more
Publication title:
GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
831
Pub. Year:
2005
Page(from):
435
Page(to):
440
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997790 [1558997792]
Language:
English
Call no.:
M23500/831
Type:
Conference Proceedings

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