Normally-off operation GaN HFET using a thin AlGaN layer for low loss switching devices
- Author(s):
- Publication title:
- GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 831
- Pub. Year:
- 2005
- Page(from):
- 355
- Page(to):
- 360
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997790 [1558997792]
- Language:
- English
- Call no.:
- M23500/831
- Type:
- Conference Proceedings
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