AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF Stability

AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF Stability

Author(s):

Koudymov, Alexei

Publication title:

GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

831

Pub. Year:

2005

Page(from):

349

Page(to):

354

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997790 [1558997792]

Language:

English

Call no.:

M23500/831

Type:

Conference Proceedings

Details

TDL ID:	ZA00014485
Series ID:	PA00000011
Conf. info. (Name):	Symposium on gan, ain, inn and their alloys
Conf. info. (Number):	2004
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2004.11.29-2004.12.03

Similar Items:

1 Conference Proceedings Deep Ultraviolet Light Emitting Diodes using AIGaN Quantum Well Active Region * Khan, M.Asif, Shatalov, Maxim, Adivarahan, Vinod, Zhang, Jam Ping, Chitnis, Ashay, Simm, Grigory, Yang, Jinwei Electrochemical Society	7 Conference Proceedings Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates Li, Jiawei, Gong, Zheng, Chen, Changqing, Adivarahan, Vinod, Gaevski, Mikhail, Kuokstis, Edmundas, Shatalov, Maxim, Gao, … Materials Research Society
2 Conference Proceedings Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors Clarke, Frederick W., Ho, Fat Duen, Khan, M.Asif, Simin, Grigory, Yang, J., Gaska, Remis, Shur, Michael S., Deng, … Materials Research Society	8 Conference Proceedings High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., … Materials Research Society
3 Conference Proceedings Bulk Breakdown in AlGaN/GaN HFETs Gradinaru, G., Kao, N. C., Gaska, R., Yang, J., Chen, Q., Khan, M. A., Sudarshan, T. S. MRS - Materials Research Society	9 Conference Proceedings Power Limitation Due to Premature Breakdown in AlGaN/GaN HFETs Gradinaru, G., Kao, N. C., Yang, J., Chen, Q., Khan, M. A., Sudarshan, T. S. MRS - Materials Research Society
4 Conference Proceedings GaN Pulsed Epitaxial lateral overgrowth on SiC and sapphire for III-N Optoelectronic Devices Khan, M. Asif, Qhalid Fareed, R.S., Yang, J.W., Zhang, Jianping, Basak, D., Mohanty, S., Adivarahan, V, Shatalov, M., … Electrochemical Society	10 Conference Proceedings Surface Acoustic Waves and Guided Optical Waves in AlGaN Films Bu, Gang, Ciplys, Daumantas, Shur, Michael, Gaska, Remis, Fareed, Qhalid, Rimeika, Romualdas, Yang, Jinwei, Khan, Asif Materials Research Society
5 Conference Proceedings Low Frequency Noise in n-GaN with High Electron Mobility Rumyantsev, S. L., Look, D. C., Levinshtein, M. E., Asif Khan, M., Simin, G., Adivarahan, V., Molnar, R. J., Shur, M. S. Trans Tech Publications	11 Conference Proceedings Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures Ryu, Mee-Yi, Kuokstis, E., Chen, C.Q., Zhang, J.P., Yang, J.W., Simin, G., Khan, M.Asif Materials Research Society
6 Conference Proceedings *AlGaN microwave power HFETs on insulating SiC substrates Sullivan, G., Gertner, E., Pittman, R., Chen, M., Pierson, R., Higgins, A., Chen, Q., Yang, J-W., Smith, R. P., Perez, … MRS-Materials Research Society	12 Conference Proceedings Role of Polarization in the Photoluminescence of C- and M-Plane Oriented GaN/AlGaN Multiple Quantum Wells Kuokstis, E., Chen, C.Q., Gaevski, M.E., Sun, W.H., Yang, J.W., Simin, G., Khan, M.Asif, Maruska, H.P., Hill, D.W., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12