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Effect of the Bottom Electrode Contact (BEC) on the Phase Transformation of N2 doped Ge2Sb2Te5(NGST) in a Phase-Change Random Access Memory

Author(s):
Lee, Suyoun
Song, Y. J.
Hwang, Y. N.
Lee, S. H.
Park, J. H.
Ryoo, K. C.
Ahn, S. J.
Jeong, C. W.
Oh, J. H.
Shin, J. M.
Yeung, F.
Jeong, W. C.
Kim, Y. T.
Park, J. B.
Koh, K. H.
Jeong, G. T.
Jeong, H. S.
Kim, Kinam
13 more
Publication title:
Materials and processes for nonvolatile memories : symposium held November 30-December 2, 2004, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
830
Pub. Year:
2005
Page(from):
373
Page(to):
378
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997783 [1558997784]
Language:
English
Call no.:
M23500/830
Type:
Conference Proceedings

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