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Long Time Data Retention and A Mechanism in Ferroelectric-Gate Field Effect Transistors with HfO2 Buffer Layer

Author(s):
Publication title:
Materials and processes for nonvolatile memories : symposium held November 30-December 2, 2004, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
830
Pub. Year:
2005
Page(from):
113
Page(to):
118
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997783 [1558997784]
Language:
English
Call no.:
M23500/830
Type:
Conference Proceedings

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