Prospect for III-Nitride Heterojunction MOSFET Structures and Devices

Prospect for III-Nitride Heterojunction MOSFET Structures and Devices

Author(s):

Publication title:

Progress in compound semiconductor materials -- electronic and optoelectronic applications

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

829

Pub. Year:

2004

Page(from):

301

Page(to):

312

Pages:

12

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997776 [1558997776]

Language:

English

Call no.:

M23500/829

Type:

Conference Proceedings

Details

TDL ID:	ZA00014483
Series ID:	PA00000011
Conf. info. (Name):	MRS Fall Meeting
Conf. info. (Number):	2004
Conf. info. (Venue):	Boston, MA,USA
Conf. info. (Date):	2004.11.29-2004.12.03

Similar Items:

1 Conference Proceedings Transmission Electron Microscopy Study of an Epitaxial Gate Oxide for III-N Semiconductor Structures Saripalli, Yoga. N., Liu, X-Q, Barlage, D. W., Johnson, M. A. L., Braddock, D., Stoddard, N. A., Chugh, A. Materials Research Society	7 Conference Proceedings A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications Johnson, M. A. L., Yu, Z., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., Edmond, J. A., Cook, J. W., Jr., … MRS - Materials Research Society
2 Conference Proceedings Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs Jesse S. Jur, Ginger D. Wheeler, Matthew T. Veety, Daniel J. Lichtenwalner, Douglas W. Barlage, Mark A. L. Johnson Materials Research Society	8 Conference Proceedings A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric Vanheusden, K., Warren, W. L., Fleetwood, D. M., Devine, R. A. B., Draper, B. L., Schwank, J. R., Shaneyfelt, M. R., … MRS - Materials Research Society
3 Conference Proceedings Microcathodoluminescence Characterization of III-Nitride Heterojunctions and Devices * Brillson, L.J., Jessen, G.H., Goss, S.H., Sun, X.L., Bradley, S.T., White, B.D., Smith, P.E., Levin, T.E., Young, A.P., … Electrochemical Society	9 Conference Proceedings GUIDED WAVE DEVICES BASED ON III-V HETEROJUNCTION AND QUANTUM WELL STRUCTURES Yu, P. K. L., Chang, W. S. C., Pappert, S., Kellner, A. L., Lin, S. C. Materials Research Society
4 Conference Proceedings MBE-grown HgCdTe heterojunction structures for IR FPAs Wu,O.K., Rajavel,R.D., DeLyon,T.J., Jensen,J.E., Cockrum,C.A., Johnson,S.M., Venzor,G.M., Chapman,G.R., Wilson,J.A., … SPIE-The International Society for Optical Engineering	10 Conference Proceedings MBE Growth of III-V Nitride Thin Films and Quantum Well Structures Johnson,M.A.L., ,N.A.El-Masry Jr., J.W.Cook,Jr, Schetzina,J.F. Trans Tech Publications
5 Conference Proceedings Strained Ge MOSFETs: Devices and Process Technology Ritenour, A., Lee, M., Lu, N., Bai, W., Yu, S., Fitzgerald, E., Kwong, D.L., Antoniadis, D. Electrochemical Society	11 Conference Proceedings The Vertical Replacement-Gate (VRG) MOSFET: A High-Performance, Vertical MOSFET with Lithography-Independent Critical Dimensions Hergenrother, J.M., Oh, S.H., Nigam, T., Monroe, D., Klemens, F.P., Kornblit, A., Baumann, F.H., Grazul, J.L., Johnson, … Electrochemical Society
6 Conference Proceedings CONSTRUCTION OF BAND PROFILES FOR SEMICONDUCTOR HETEROJUNCTIONS AND LAYERED STRUCTURES Garland, J. W., Kassel, L., Yang, D., Zhang, Z, Raccah. P. M. Materials Research Society	12 Conference Proceedings Tunneling MOSFETs Based on III-V Staggered Heterojunctions P.M. Asbeck, L. Wang, S. Gu, Y. Taur, E.T. Yu Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12