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Elevated Temperature Characteristics of Carbon-Doped GaInP/GaAs Heterojunction Bipolar Transistor Grown by Solid Source Molecular Beam Epitaxy

Author(s):
Publication title:
Progress in compound semiconductor materials -- electronic and optoelectronic applications
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
799
Pub. Year:
2004
Page(from):
229
Page(to):
234
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997370 [1558997377]
Language:
English
Call no.:
M23500/799
Type:
Conference Proceedings

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