Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs) on Ge/SiGe/Si Substrates

Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs) on Ge/SiGe/Si Substrates

Author(s):

Kwon, O.

Publication title:

Progress in compound semiconductor materials -- electronic and optoelectronic applications

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

799

Pub. Year:

2004

Page(from):

161

Page(to):

166

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997370 [1558997377]

Language:

English

Call no.:

M23500/799

Type:

Conference Proceedings

Details

TDL ID:	ZA00014471
Series ID:	PA00000011
Conf. info. (Name):	MRS Fall Meeting
Conf. info. (Number):	2003
Conf. info. (Venue):	Boston, MA,USA
Conf. info. (Date):	2003.12.01-2003.12.04

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