Bandgap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy | 東京工業大学附属図書館文献データベース

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Bandgap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy

Author(s):

Nanishi, Yasushi

Yamaguchi, Tomohiro

Harima, Hiroshi

Miyajima, Takao

Publication title:

GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

798

Pub. Year:

2004

Page(from):

189

Page(to):

200

Pages:

12

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997363 [1558997369]

Language:

English

Call no.:

M23500/798

Type:

Conference Proceedings

Details

TDL ID:	ZA00014470
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN and related alloys
Conf. info. (Number):	2003
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2003.12.01-2003.12.05

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