Molecular Dynamics Simulation of Point Defect Accumulation in 3C-SiC

Molecular Dynamics Simulation of Point Defect Accumulation in 3C-SiC

Author(s):

Publication title:

Radiation effects and ion-beam processing of materials : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

792

Pub. Year:

2004

Page(from):

479

Page(to):

484

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558997301 [155899730X]

Language:

English

Call no.:

M23500/792

Type:

Conference Proceedings

Details

TDL ID:	ZA00014464
Series ID:	PA00000011
Conf. info. (Name):	Symposium on radiation effects and ion-beam processing of materials
Conf. info. (Number):	2003
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2003.12.01-2003.12.05

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