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4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric

Author(s):
Perez-Tomas, A.
Godignon, P.
Mestres, N.
Tournier, D.
Montserrat, J.
Millan, J.
1 more
Publication title:
Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
815
Pub. Year:
2004
Page(from):
211
Page(to):
216
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997653 [1558997652]
Language:
English
Call no.:
M23500/815
Type:
Conference Proceedings

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