Microstructural Aspects and Mechanism of Degradation of 4H-SiC PiN Diodes Under Forward Biasing

Microstructural Aspects and Mechanism of Degradation of 4H-SiC PiN Diodes Under Forward Biasing

Author(s):

Publication title:

Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

815

Pub. Year:

2004

Page(from):

91

Page(to):

102

Pages:

12

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997653 [1558997652]

Language:

English

Call no.:

M23500/815

Type:

Conference Proceedings

Details

TDL ID:	ZA00014457
Series ID:	PA00000011
Conf. info. (Name):	Symposium on Silicon carbide
Conf. info. (Number):	2004
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.14-2004.04.15

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