Epitaxial Growth of 3C-SiC on T-Shape Columnar Si Substrates

Epitaxial Growth of 3C-SiC on T-Shape Columnar Si Substrates

Author(s):

Publication title:

Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

815

Pub. Year:

2004

Page(from):

65

Page(to):

70

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997653 [1558997652]

Language:

English

Call no.:

M23500/815

Type:

Conference Proceedings

Details

TDL ID:	ZA00014457
Series ID:	PA00000011
Conf. info. (Name):	Symposium on Silicon carbide
Conf. info. (Number):	2004
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.14-2004.04.15

Similar Items:

1 Conference Proceedings Pendeo Epitaxial Growth of 3C-SiC on Si Substrates Shoji, A., Okui, Y., Nishiguchi, T., Ohshima, S., Nishino, S. Trans Tech Publications	7 Conference Proceedings Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications
2 Conference Proceedings Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method Sugishita, S., Shoji, A., Mukai, Y., Nishiguchi, T., Michikami, K., Issiki, T., Ohshima, S., Nishino, S. Trans Tech Publications	8 Conference Proceedings Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications
3 Conference Proceedings Epitaxial Growth of 2 Inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Zhu, Jiliang, Chen, Yi, Mukai, Yusuke, Shoji, Akira, Nishiguchi, Taro, Ohshima, Satoru, Nishino, S. Materials Research Society	9 Conference Proceedings Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate Okui, Y., Jacob, C., Ohshima, S., Nishino, S. Trans Tech Publications
4 Conference Proceedings The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, S., Nishino, S. Trans Tech Publications	10 Conference Proceedings Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, Satoru, Nishino, S. Trans Tech Publications
5 Conference Proceedings Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, S., Nishino, S. Trans Tech Publications	11 Conference Proceedings Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method Isshiki, T., Nakamura, M., Nishiguchi, T., Nishio, K., Ohshima, S., Nishino, S. Trans Tech Publications
6 Conference Proceedings The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, S., Nishino, S. Trans Tech Publications	12 Conference Proceedings Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate Shoji, A., Nakamura, M., Mitikami, K., Isshiki, T., Ohshima, S., Nishino, S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12