High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment

High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasma Pre-Treatment

Author(s):

Shin, Moon Young

Publication title:

Flexible electronics 2004 -- materials and device technology : symposium held April 13-16, 2004, San Francisco, California, U.S.A

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

814

Pub. Year:

2004

Page(from):

157

Page(to):

162

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997646 [1558997644]

Language:

English

Call no.:

M23500/814

Type:

Conference Proceedings

Details

TDL ID:	ZA00014456
Series ID:	PA00000011
Conf. info. (Name):	Symposium on flexible electronics
Conf. info. (Number):	2004
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.13-2004.04.16

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