Tunable Workfunction With TaN Metal Gate on HfO2-HfxSiyO Dielectrics

Tunable Workfunction With TaN Metal Gate on HfO2-HfxSiyO Dielectrics

Author(s):

Olsen, Christopher S.

Publication title:

Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

811

Pub. Year:

2004

Page(from):

155

Page(to):

162

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997615 [155899761X]

Language:

English

Call no.:

M23500/811

Type:

Conference Proceedings

Details

TDL ID:	ZA00014453
Series ID:	PA00000011
Conf. info. (Name):	Symposium on integration of advanced micro- and nanoelectronic devices
Conf. info. (Number):	2004
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2004.04.13-2004.04.16

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