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Behavior of Si Interstitials and Boron-Interstitial Pairs at the Si/SiO2 Interface

Author(s):
Publication title:
Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
810
Pub. Year:
2004
Page(from):
339
Page(to):
344
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997608 [1558997601]
Language:
English
Call no.:
M23500/810
Type:
Conference Proceedings

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