Suppression of Ni Silicide Formation by Se Passivation of Si(001)
- Author(s):
- Publication title:
- Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 810
- Pub. Year:
- 2004
- Page(from):
- 129
- Page(to):
- 134
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997608 [1558997601]
- Language:
- English
- Call no.:
- M23500/810
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Low Schottky Barrier on N-Type Si for N-Channel Schottky Source/Drain MOSFETs
Materials Research Society |
7
Conference Proceedings
FORMATION AND STRUCTURE OF THIN Mo LAYERS AND Mo-Ni MULTILAYERS ON Ni (001) BY MOLECULAR BEAM EPITAXY
Materials Research Society |
2
Conference Proceedings
Thermal Stability of Low Resistance Ohmic Contacts Between Ti and Se-Passivated n-Type Si(001)
Electrochemical Society |
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
6
Conference Proceedings
Molecular Beam Epitaxy of Si/ZnS/Si(100) Heterostructures for Silicon-Based Quantum Devices
MRS - Materials Research Society |
Electrochemical Society |