Field-Induced Reactions of Water Molecules at Si-Dielectric Interfaces
- Author(s):
- Publication title:
- Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 786
- Pub. Year:
- 2004
- Page(from):
- 171
- Page(to):
- 176
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997240 [1558997245]
- Language:
- English
- Call no.:
- M23500/786
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Hydrogen Model for Negative Bias Temperature Instabilities in MOS Gate Dielectrics
Electrochemical Society |
Electrochemical Society |
Springer |
Electrochemical Society |
Trans Tech Publications |
MRS - Materials Research Society |
Electrochemical Society |
10
Conference Proceedings
A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric
MRS - Materials Research Society |
Electrochemical Society |
11
Conference Proceedings
NEAR INTERFACE OXIDE DEGRADATION IN HIGH TEMPERATURE ANNEALED Si/SiO2/Si STRUCTURES
MRS - Materials Research Society |
6
Conference Proceedings
The Effects of Radiation and Charge Trapping on Reliability of Alternative Gate Dielectrics
Springer |
12
Conference Proceedings
Atomic Dynamics During Silicon Oxidation and the Nature of Defects at the Si-SiO2 Interface
MRS - Materials Research Society |