Preparation, Microstructure and Physical Characteristics of Ferroelectric Pb5Ge3O11 Thin Films for Memory Application

Preparation, Microstructure and Physical Characteristics of Ferroelectric Pb5Ge3O11 Thin Films for Memory Application

Author(s):

Publication title:

Ferroelectric thin films XII : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

784

Pub. Year:

2004

Page(from):

213

Page(to):

218

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997226 [1558997229]

Language:

English

Call no.:

M23500/784

Type:

Conference Proceedings

Details

TDL ID:	ZA00014441
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ferroelectric thin films
Conf. info. (Number):	12th
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2003.12.01-2003.12.04

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