Relaxed SiGe Layers With High Ge Content by Compliant Substrates

Relaxed SiGe Layers With High Ge Content by Compliant Substrates

Author(s):

Yin, H.

Publication title:

Intergration of heterogeneous thin-film materials and devices : symposium held April 23-24, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

768

Pub. Year:

2003

Page(from):

15

Page(to):

20

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558997059 [1558997059]

Language:

English

Call no.:

M23500/768

Type:

Conference Proceedings

Details

TDL ID:	ZA00014426
Series ID:	PA00000011
Conf. info. (Name):	Symposium on integration of heterogeneous thin-film materials and devices
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.23-2003.04.24

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