Formation of NiSi-Silicided p+n Shallow Junctions Using Implant Through Silicide and Low Temperature Furnace Annealing

Formation of NiSi-Silicided p+n Shallow Junctions Using Implant Through Silicide and Low Temperature Furnace Annealing

Author(s):

Publication title:

CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

765

Pub. Year:

2003

Page(from):

235

Page(to):

242

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997028 [1558997024]

Language:

English

Call no.:

M23500/765

Type:

Conference Proceedings

Details

TDL ID:	ZA00014423
Series ID:	PA00000011
Conf. info. (Name):	Symposium on CMOS front-end materials and process technology
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.24

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