Relaxed SiGe Layers With High Ge Content by Compliant Substrates

Relaxed SiGe Layers With High Ge Content by Compliant Substrates

Author(s):

Yin, H.

Publication title:

CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

765

Pub. Year:

2003

Page(from):

147

Page(to):

152

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997028 [1558997024]

Language:

English

Call no.:

M23500/765

Type:

Conference Proceedings

Details

TDL ID:	ZA00014423
Series ID:	PA00000011
Conf. info. (Name):	Symposium on CMOS front-end materials and process technology
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.24

Similar Items:

1 Conference Proceedings Relaxed SiGe Layers With High Ge Content by Compliant Substrates Yin, H., Peterson, R. L., Hobart, K. D., Shieh, S. R., Duffy, T. S., Sturm, J. C. Materials Research Society	7 Conference Proceedings Growth and Characterization of High-Ge Content SiGe Virtual Substrates Erdtmann, M., Carroll, M., Carlin, I., Langdo, T., Westhoff, R., Leitz, C., Yang, V., Currie, M., Lochtefeld, T., … Electrochemical Society
2 Conference Proceedings Interference-enhanced Raman Scattering in Strain Characterization of Ultra-Thin Strained SiGe and Si Films on Insulator Yin, Haizhou, Hobart, K.D., Shieh, S.R., Peterson, R.L., Duffy, T.S., Sturm, J.C. Materials Research Society	8 Conference Proceedings Relaxation Mechanisms of Strained SiGe Films Bonded to High and Low Viscosity Oxides Hobart, K.D., Kub, F.J., Fatemi, M., Twigg, M.E., Thompson, P.E., Kuan, T.S., Inoki, C.K. Electrochemical Society
3 Conference Proceedings Relaxation of a Strained Elastic Film on a Viscous Layer Huang, R., Yin, H., Liang, J., Hobart, K.D., Sturm, J.C., Suo, Z. Materials Research Society	9 Conference Proceedings Strain Relaxation of Ion-Implanted Strained Silicon on Relaxed SiGe Crosby, R.T., Jones, K.S., Law, M.E., Saavedra, A.F., Hansen, J.L., Larsen, A.N., Liu, J. Materials Research Society
4 Conference Proceedings Island Scaling Effects on Photoluminescence of Strained SiGe/Si(100) Peterson, Rebecca L., Yin, Haizhou, Sturm, J.C. Materials Research Society	10 Conference Proceedings Impact of the Ge Content on the Radiation Hardness of Heterojunction Diodes in SiGe Strained Layers Ohyama, H., Simoen, E., Claeys, C., Takami, Y., Hayama, K., Hakata, T., Tokuyama, J., Kobayashi, K., Sunaga, H., … MRS - Materials Research Society
5 Conference Proceedings 63 Thermal Stability of a Novel Graded Layer for Relaxed SiGe/Si Heteroepitaxy Wong, L.H., Wong, C.C., Ferraris, C., White, T.J., Liu, J.P., Chan, L., Sohn, O.K., Hsia, L. C. Electrochemical Society	11 Conference Proceedings Suppression of Boron Transient-Enhanced Diffusion in SiGe HBTs by Carbon Incorporation Lanzerotti, L. D., Sturm, J. C., Stach, E., Hull, R., Buyuklimanli, T., Magee, C. MRS - Materials Research Society
6 Conference Proceedings Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC Jin, S., Bender, H., Donaton, R. A., Maex, K., Vantomme, A., Langouche, G., Amour, A. St., Sturm, J. C. MRS - Materials Research Society	12 Conference Proceedings Relaxed SiGe On Insulator Fabricated via Wafer Bonding and Layer Transfer: Etch-back and Smart-cut Alternatives Taraschi, G., Cheng, Z.-Y., Currie, M.T., Leitz, C.W., Langdo, T.A., Lee, M.L., Pitera, A., Fitzgerald, E.A., … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12