GaP-Based MIS Capacitors Using a SiN Gate Dielectric

GaP-Based MIS Capacitors Using a SiN Gate Dielectric

Author(s):

Publication title:

New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

764

Pub. Year:

2003

Page(from):

321

Page(to):

326

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997011 [1558997016]

Language:

English

Call no.:

M23500/764

Type:

Conference Proceedings

Details

TDL ID:	ZA00014422
Series ID:	PA00000011
Conf. info. (Name):	Symposium on new applications for wide-bandgap semiconductors
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.24

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