Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN

Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN

Author(s):

Publication title:

New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

764

Pub. Year:

2003

Page(from):

209

Page(to):

214

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997011 [1558997016]

Language:

English

Call no.:

M23500/764

Type:

Conference Proceedings

Details

TDL ID:	ZA00014422
Series ID:	PA00000011
Conf. info. (Name):	Symposium on new applications for wide-bandgap semiconductors
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.24

Similar Items:

1 Conference Proceedings Characterization of Deep-Level Traps in GaAs Semi-Insulating Substrates Using Capacitance Transient Measurements K. Iniewski. M. Liu, C. A. T. Salama Electrochemical Society	7 Conference Proceedings Luminescence of Doped and Undoped Bulk Crystals of GaN Teisseyre,H., Suski,T., Perlin,P., Gorczyca,I., Leszczynsk,M., Grzegory,I., Jun,J., Porowski,S. Trans Tech Publications
2 Conference Proceedings Deep Level Formation in Undoped and Oxygen-Doped GaN Gregie, J. M., Korotkov, R. Y., Wessels, B. W. Materials Research Society	8 Conference Proceedings Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies Gotz, W., Johnson, N. M., Street, R. A., Amano, H., Akasaki, I. MRS - Materials Research Society
3 Conference Proceedings Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition Kato, M., Tanaka, S., Ichimura, M., Arai, E., Nakamura, S., Kimoto, T. Trans Tech Publications	9 Conference Proceedings Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, T. Kimoto Trans Tech Publications
4 Conference Proceedings Photoluminescence Study of Deep-Level Defects in Undoped GaN Reshchikov, M.A., Morkoc, H., Park, S.S., Lee, K.Y. Materials Research Society	10 Conference Proceedings Observation of Midgap States in GaN with Optical-Isothermal Capacitance Transient Spectroscopy Hacke, P., Miyoshi, H., Hiramatsu, K., Okumura, H., Yoshida, S., Okushi, H. MRS - Materials Research Society
5 Conference Proceedings Study of short-term instabilities of InGaN/GaN Light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy Meneghesso, G., Meneghini, M., Levada, S., Zanoni, E., Cavallini, A. D. M., Castaldini, A., Hdrle, V., Zahner, T., … SPIE - The International Society of Optical Engineering	11 Conference Proceedings Characterization Of Deep Levels In 3C-SiC By Optical Capacitance-Transient Spectroscopy Nakakura, Y., Kato, M., Ichimura, M., Arai, E., Tokuda, Y. Materials Research Society
6 Conference Proceedings Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy Kobayashi, S., Imai, S., Hayami, Y., Kushibe, M., Shinohe, T., Okushi, H. Trans Tech Publications	12 Conference Proceedings Crystal growth and characterization of vanadium-doped and undoped CdSSe Chen,K.-T., Chen,Y.-F., Davis,M., Morgan,S. H., Burger,A., Su,C.-H., Volz,M. P., Lehoczky,S. L. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12