Observation and Annealing of Incomplete Recrystallized Junction Defects Due to the Excimer Laser Beam Diffraction at the Gate Edge in Poly-Si TFT

Observation and Annealing of Incomplete Recrystallized Junction Defects Due to the Excimer Laser Beam Diffraction at the Gate Edge in Poly-Si TFT

Author(s):

Publication title:

Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

762

Pub. Year:

2003

Page(from):

723

Page(to):

728

Pages:

6

Pub. info.:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558996991 [1558996990]

Language:

English

Call no.:

M23500/762

Type:

Conference Proceedings

Details

TDL ID:	ZA00014420
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous and nanocrystalline silicon-based films
Conf. info. (Number):	2003
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2003.04.22-2003.04.25

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