MOCVD of HfO2 from Alkoxide and Alkylamide Precursors
- Author(s):
Roberts, John L. Williams, Paul A. Jones, Anthony C. Marshall, Paul Chalker, Paul R. Bickley, Jamie F. Davies, Hywel O. Smith, Lesley M. - Publication title:
- Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 745
- Pub. Year:
- 2003
- Page(from):
- 173
- Page(to):
- 178
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996823 [1558996826]
- Language:
- English
- Call no.:
- M23500/745
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Electrochemical Society |
2
Conference Proceedings
Liquid Injection MOCVD and ALD Studies of 'Single Source' Sr-Nb and Sr-Ta Precursors
Materials Research Society |
8
Conference Proceedings
Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
10
Conference Proceedings
Optical characterization of high-k dielectrics HfO2 thin films obtained by MOCVD
SPIE-The International Society for Optical Engineering |
5
Conference Proceedings
Atomic Layer Deposition Of Zirconium Dioxide Thin Films Using New Alkoxide Precursors
Materials Research Society |
11
Conference Proceedings
Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films
Materials Research Society |
Electrochemical Society |
Materials Research Society |