Characterization of Ruthenium and Ruthenium Oxide Thin Films Deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications

Characterization of Ruthenium and Ruthenium Oxide Thin Films Deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications

Author(s):

Publication title:

Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

745

Pub. Year:

2003

Page(from):

61

Page(to):

66

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996823 [1558996826]

Language:

English

Call no.:

M23500/745

Type:

Conference Proceedings

Details

TDL ID:	ZA00014405
Series ID:	PA00000011
Conf. info. (Name):	Symposium on novel materials and processes for advances CMOS
Conf. info. (Number):	2002
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.04

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