Electrical Isolation of p-Type GaAsN Epitaxial Layers by Ion Irradiation

Electrical Isolation of p-Type GaAsN Epitaxial Layers by Ion Irradiation

Author(s):

Publication title:

Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

744

Pub. Year:

2003

Page(from):

659

Page(to):

664

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996816 [1558996818]

Language:

English

Call no.:

M23500/744

Type:

Conference Proceedings

Details

TDL ID:	ZA00014404
Series ID:	PA00000011
Conf. info. (Name):	Symposium on progress in semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.05

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