Photoluminescence in UHV/CVD Tensile-Strained Si Type-II Quantum Wells on Bulk Crystal SiGe Substrates
- Author(s):
- Publication title:
- Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 744
- Pub. Year:
- 2003
- Page(from):
- 513
- Page(to):
- 518
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996816 [1558996818]
- Language:
- English
- Call no.:
- M23500/744
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Growth and Characterization of UHV/CVD Si/SiGe Strained-Layer Superlattices on Bulk Crystal SiGe Substrates
Materials Research Society |
7
Conference Proceedings
WELL-RESOLVED BAND-EDGE PHOTOLUMINESCENCE FROM STRAINED Si1-xGex LAYERS GROWN BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION
Materials Research Society |
Materials Research Society |
Materials Research Society |
Electrochemical Society |
9
Conference Proceedings
THE GROWTH AND IN-SITU DOPING OF SiGe/Si STRAINED HETEROSTRUCTURES BY RTP/VLP-CVD
MRS - Materials Research Society |
4
Conference Proceedings
Band-gap tuning of SiGe/Si multiple quantum wells for waveguides and photodetectors
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
Materials Research Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |