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Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors

Author(s):
Clarke, Frederick W.
Ho, Fat Duen
Khan, M.Asif
Simin, Grigory
Yang, J.
Gaska, Remis
Shur, Michael S.
Deng, Jianyu
Karmalkar, S.
4 more
Publication title:
GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
743
Pub. Year:
2002
Page(from):
561
Page(to):
566
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996809 [155899680X]
Language:
English
Call no.:
M23500/743
Type:
Conference Proceedings

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