A Semi-Empirical Model for Electron Mobility at the SiC/SiO2 Interface

A Semi-Empirical Model for Electron Mobility at the SiC/SiO2 Interface

Author(s):: Saks, Nelson S.
Publication title:: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
Title of ser.:: Materials Research Society symposium proceedings
Ser. no.:: 742
Pub. Year:: 2003
Page(from):: 233
Page(to):: 240
Pages:: 8
Pub. info.:: Warrendale, Pa.: Materials Research Society
ISSN:: 02729172
ISBN:: 9781558996793 [1558996796]
Language:: English
Call no.:: M23500/742
Type:: Conference Proceedings

Details

TDL ID:	ZA00014402
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon carbide
Conf. info. (Number):	2002
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.04

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