Blank Cover Image

Effects of Structural Defects on Diode Properties in 4H-SiC

Author(s):
Skromme, B.J.
Palle, K.C.
Mikhov, M.K.
Meidia, H.
Mahajan, S.
Huang, X.R.
Vetter, W.M.
Dudley, M.
Moore, K.
Smith, S.
Gehoski, T.
6 more
Publication title:
Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
742
Pub. Year:
2003
Page(from):
181
Page(to):
186
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996793 [1558996796]
Language:
English
Call no.:
M23500/742
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers

Skromme, B.J., Palle, K., Poweleit, C.D., Bryant, L.R., Vetter, W.M., Dudley, M., Moore, K., Gehoski, T.

Trans Tech Publications
7 Conference Proceedings Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography

Dudley, M., Vetter, W.M., Huang, X.R., Neudeck, P.G., Powell, J.A.

Trans Tech Publications
2 Conference Proceedings Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers

Skromme, B.J., Palle, K., Poweleit, C.D., Bryant, L.R., Vetter, W.M., Dudley, M., Moore, K., Gehoski, T.

Trans Tech Publications
8 Conference Proceedings Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography

Dudley, M., Vetter, W.M., Huang, X.R., Neudeck, P.G., Powell, J.A.

Trans Tech Publications
3 Conference Proceedings Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

Wang, Y., Mikhov, M.K., Skromme, B.J.

Trans Tech Publications
9 Conference Proceedings Structural Defect-Related Photoluminescence In GuN

Chen, L., Skromme, B.J., Mikhov, M.K., Yamane, H., Aoki, M., DiSalvo, F.J., Wagner, B., Davis, R.F., Grudowski, P.A., …

Materials Research Society
4 Conference Proceedings Evolution of Subgrain Boundaries in Heteroepitaxial GaN/AlN/6H-SiC Grown by Metalorganic Chemical Vapor Deposition

Liu, H.X., Ali, G.N., Palle, K.C., Mikhov, M.K., Skromme, B.J., Reitmeyer, Z.J., Davis, R.F.

Materials Research Society
10 Conference Proceedings Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates

Skromme, B.J., Mikhov, M.K., Chen, L., Samson, G., Wang, R., Li, C., Bhat, I.

Trans Tech Publications
5 Conference Proceedings Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes

Wang, Y., Chen, L., Mikhov, M.K., Samson, G., Skromme, B.J.

Trans Tech Publications
11 Conference Proceedings Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults

Skromme, B.J., Chen, L., Mikhov, M.K., Yamane, H., Aoki, M., DiSalvo, F.J.

Trans Tech Publications
6 Conference Proceedings Electrostatic Force Microscopy and Secondary Electron Imaging of Double Stacking Faults in Heavily n-Type 4H-SiC After Oxidation

Mikhov, M.K., Skromme, B.J., Wang, R., Li, C., Bhat, I.

Materials Research Society
12 Conference Proceedings Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer

Hui Chen, Balaji Raghothamachar, William Vetter, Michael Dudley, Y. Wang, B. J. Skromme

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12