Stimulated Emission and Gain in GaN Epilayers Grown on Si
- Author(s):
- Publication title:
- UV solid-state light emitters and detectors
- Title of ser.:
- NATO science series. Series 2, Mathematics, physics and chemistry
- Ser. no.:
- 144
- Pub. Year:
- 2004
- Page(from):
- 199
- Page(to):
- 206
- Pages:
- 8
- Pub. info.:
- Dordrecht: Kluwer Academic Publishers
- ISBN:
- 9781402020346 [1402020341]
- Language:
- English
- Call no.:
- N17050/144
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures
Kluwer Academic Publishers |
7
Conference Proceedings
Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogest-Doped ZnSe Epilayers Grown by MOVPE
Trans Tech Publications |
2
Conference Proceedings
ZnMgSSe/ZnSe separate confinement heterostructure multiple quantum well lasers
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
4
Conference Proceedings
Optically pumped transverse lasers based on ZnMgSSe/ZnSe and InGaN/GaN heterostructures
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
5
Conference Proceedings
Spectral-angular and threshold characteristics of ultraviolet-blue In(Al)GaN/GaN/AI2O3 heterostructure lasers
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
6
Conference Proceedings
InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80-450 K
SPIE-The International Society for Optical Engineering |
12
Conference Proceedings
Production scale MOVPE reactors for electronic and optoelectronic applications
SPIE-The International Society for Optical Engineering |