Ultrathin oxide films for advanced gate dielectrics applications. Current progress and future challenges

Ultrathin oxide films for advanced gate dielectrics applications. Current progress and future challenges

Author(s):: Gusev, E. P.
Publication title:: Defects in SiO[2] and related dielectrics : science and technology
Title of ser.:: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:: 2
Pub. Year:: 2000
Page(from):: 557
Page(to):: 580
Pages:: 24
Pub. info.:: Dordrecht: Kluwer Academic Publishers
ISBN:: 9780792366850 [0792366859]
Language:: English
Call no.:: N17050/2
Type:: Conference Proceedings

Details

TDL ID:	ZA00014253
Series ID:	PA00000025
Conf. info. (Name):	NATO Advanced Study Institute on Defects in SiO[2] and Related Dielectrics, Science and Technology
Conf. info. (Number):	2000
Conf. info. (Venue):	Erice, Italy
Conf. info. (Date):	2000.04.08-2000.04.20

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