Blank Cover Image

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

Author(s):
Ivanov, P. A.
Levinshtein, M. E.
Mnatsakanov, T. T.
Palmour, J. W.
Singh, R.
Irvin, K. G.
Das, M.
2 more
Publication title:
Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
Title of ser.:
Materials science forum
Ser. no.:
483-485
Pub. Year:
2005
Page(from):
973
Page(to):
976
Pages:
4
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499632 [0878499636]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

Dyakonova, N. V., Ivanov, P. A., Kozlov, V. A., Levinshtein, M. E., Palmour, J. W., Rumyantsev, S. L., Singh, R.

Trans Tech Publications
7 Conference Proceedings Fast Switch-Off of High Voltage 4H-SiC npn BJTs from Deep Saturation Mode

P.A. Ivanov, M.E. Levinshtein, J.W. Palmour, A.K. Agarwal, Q.J. Zhang

Trans Tech Publications
2 Conference Proceedings Self-Heating of 4H-SiC PiN Diodes at High Current Densities

M.E. Levinshtein, T.T. Mnatsakanov, P.A. Ivanov, J.W. Palmour, M.K. Das

Trans Tech Publications
8 Conference Proceedings Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

P.A. Ivanov, M.E. Levinshtein, M.S. Boltovets, V.A. Krivutsa, J. Palmour, M. Das, B.A. Hull

Trans Tech Publications
3 Conference Proceedings Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

M.E. Levinshtein, P.A. Ivanov, J. Palmour, A. Agarwal, M.K. Das

Trans Tech Publications
9 Conference Proceedings Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias

E.I. Shabunina, M.E. Levinshtein, N.M. Shmidt, P.A. Ivanov, J.W. Palmour

Trans Tech Publications
4 Conference Proceedings High-Temperature (up to 800 K) Operation of 6-kV 4F-SiC Junction Diodes

Levinshtein, M.E., Ivanov, P.A., Boltovets, M.S., Krivutsa, V.A., Palmour, J.W., Das, M.K., Hull, B.A.

Trans Tech Publications
10 Conference Proceedings 5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC

Irvine, K. G., Singh, R., Paisley, M. J., Palmour, J. W., Kordina, O., Carter, C. H., Jr.

MRS - Materials Research Society
5 Conference Proceedings Turn-On Process in High-Voltage 4H-SiC Thyristors

Dyakonova, N. V., Levinshtein, M. E., Palmour, J. W., Rumyantsev, S. L., Singh, R.

MRS - Materials Research Society
11 Conference Proceedings 4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, P.A. Ivanov, J.W. Palmour

Trans Tech Publications
6 Conference Proceedings Parameters of Electron-Hole Scattering in Silicon Carbide

Mnatsakanov, T.T., Levinshtein, M.E., Ivanov, P.A., Tandoev, A.G., Yurkov, S.N., Palmour, J.W., Singh, R.

Trans Tech Publications
12 Conference Proceedings Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Palmour, J.W., Ryu, S.H.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12