Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material

Author(s):

Gudjonsson, G.

Olafsson, H. O.

Allerstam, F.

Nilsson, P. A.

Sveinbjornsson, E. O.

Rodle, T.

Jos, R.

2 more

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

833

Page(to):

836

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

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