Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET Fabrication
- Author(s):
Kim, S. C. Bahng, W. Kim, N. K. Kim, E. D. Ayalew, T. Grasser, T. Selberherr, S. - Publication title:
- Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
- Title of ser.:
- Materials science forum
- Ser. no.:
- 483-485
- Pub. Year:
- 2005
- Page(from):
- 793
- Page(to):
- 796
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499632 [0878499636]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring
Trans Tech Publications |
11
Conference Proceedings
Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates
Trans Tech Publications |
6
Conference Proceedings
Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations
Trans Tech Publications |
Trans Tech Publications |