Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC

Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC

Author(s):

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

501

Page(to):

506

Pages:

6

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings Nitrogen-Vacancy Complexes in SiC ? Final Annealing Products of the Silicon Vacancy? Gerstmann, U., Rauls, E., Frauenheim, Th., Overhof, H. Trans Tech Publications	7 Conference Proceedings Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations U. Gerstmann, E. Rauls, S. Greulich-Weber, E.N. Kalabukhova, D.V. Savchenko, A. Poeppl, F. Mauri Trans Tech Publications
2 Conference Proceedings The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory Gerstmann, U., Gali, A., Deak, P., Frauenheim, Th., Overhof, H. Trans Tech Publications	8 Conference Proceedings Theory of 3d transition metal defects in 3C-SiC.(Invited) Overhof,H. Trans Tech Publications
3 Conference Proceedings Ab-Initio Calculation of the Hyperfine Fields for Deep Al Donors in GaAs under Pressure Overhof,H. Trans Tech Publications	9 Conference Proceedings New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC U. Gerstmann, S. Greulich-Weber, E. Rauls, J.M. Spaeth, E.N. Kalabukhova, E.N. Mokhov, F. Mauri Trans Tech Publications
4 Conference Proceedings Co-Doping of Er-Doped SiC with Oxygen - A Promising Way Towards Efficient 1540 nm Emission at Room Temperature? Gerstmann, U., Rauls, E., Sanna, S., Frauenheim, T., Obethof, H. Trans Tech Publications	10 Conference Proceedings Ab-Initio Total Energy Calculations and the Hyperfine Interaction of Interstitial Iron in Silicon Weihrich,H., Overhof,H. Trans Tech Publications
5 Conference Proceedings Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC Pinheiro, M.V.B., Rauls, E., Gerstmann, U., Greulich-Weber, S., Spaeth, J.M., Overhof, H. Trans Tech Publications	11 Conference Proceedings Ab-Initio Total Energy Calculation of Iron-Aluminum Pairs in Silicon Weihrich,H., Overhof,H. Trans Tech Publications
6 Conference Proceedings Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs Rauls, E., Hajnal, Z., Gali, A., Deak, P., Frauenheim, T. Trans Tech Publications	12 Conference Proceedings Ab Initio Total Energy Calculation and the Hyperfine Interactions of Iron-Acceptor Pairs in Silicon Weihlich,H., Overhof,H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12