Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes

Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes

Author(s):

Pons, M.

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

3

Page(to):

8

Pages:

6

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings Numerical simulation of SiC processes: A characterization tool for the design of epitaxial structures in electronics Pans, M., Nishizawa, S., Wettmann, P., Ucar, M., Blanquet, E., Dedulle, J. M., Baillet, F., Chaussende, D., Bernard, C., … Electrochemical Society	7 Conference Proceedings Numerical Simulation of SiC Boule Growth by Sublimation Madar, R., Pons, M., Dedulle, J. -M., Blanquet, E., Pisch, A., Grosse, P., Faure, C., Anikin, M., Bernard, C. Trans Tech Publications
2 Conference Proceedings Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC Meziere, J., Pons, M., Dedulle, J.-M., Blanquet, E., Ferret, P., Di Cioccio, L., Billon, T. Trans Tech Publications	8 Conference Proceedings Heat Transfer Modeling of a New Crystal Growth Process Baillet, F., Chaussende, D., Charpentier, L., Pernot, E., Pons, M., Madar, R. Trans Tech Publications
3 Conference Proceedings In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth Charpentier, L., Baillet, F., Chaussende, D., Auvray, L., Pons, M., Pernot, E., Madar, R. Trans Tech Publications	9 Conference Proceedings A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process Charpentier, L., Baillet, F., Chaussende, D., Pernot, E., Pons, M., Madar, R. Trans Tech Publications
4 Conference Proceedings Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition Pons, M., Meziere, J., Wang Tang Kuan, S., Blanquet, E., Ferret, P., Di Cioccio, L., Billon, T., Madar, R. Trans Tech Publications	10 Conference Proceedings Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation Chaussende, D., Baillet, F., Charpentier, L., Pernot, E., Pons, M., Madar, R. Trans Tech Publications
5 Conference Proceedings Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition Pons, M., Meziere, J., Wan.Tang.Kuan,S, Blanquet, E., Ferret, P., Cioccio, L. Di., Billon, T., Madar, R. Trans Tech Publications	11 Conference Proceedings Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth Meziere, J., Ferret, P., Blanquet, E., Pons, M., Di Cioccio, L., Billon, T. Trans Tech Publications
6 Conference Proceedings ln Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging Chaussende, D., Wellmann, P.J., Ucar, M., Pons, M., Madar, R. Trans Tech Publications	12 Conference Proceedings Top Seeded Solution Growth of 3C-SiC Single Crystals F. Mercier, D. Chaussende, J.M. Dedulle, M. Pons, R. Madar Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12