Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Author(s):

Li, X.

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(2)

Pub. Year:

2000

Page(from):

1375

Page(to):

1378

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014227
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination J.H. Zhang, J.H. Zhao, X.H. Wang, X.Q. Li, L. Fursin Trans Tech Publications	7 Conference Proceedings A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC Li, X., Fursin, L., Zhao, J.H., Alexandrov, P., Pan, M., Weiner, M., Burke, T., Khalil, G. Trans Tech Publications
2 Conference Proceedings 6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs Zhao, J.H., Tone, K., Li, X., Alexandrov, P., Fursin, L., Weiner, M. Trans Tech Publications	8 Conference Proceedings A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC Li, X., Fursin, L., Zhao, J.H., Alexandrov, P., Pan, M., Weiner, M., Burke, T., Khalil, G. Trans Tech Publications
3 Conference Proceedings High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications Zhao, J.H., Li, X., Tone, K., Alexandrov, P., Fursin, L., Carter, J., Weiner, M. Trans Tech Publications	9 Conference Proceedings 4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer Wu, J., Fursin, L., Li, Y., Alexandrov, P., Zhao, J.H. Trans Tech Publications
4 Conference Proceedings 4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET Zhao, J.H., Fursin, L., Alexandrov, P., Li, X., Weiner, M. Trans Tech Publications	10 Conference Proceedings SiC Solid-State Disconnect for High Power System Applications X.Q. Li, P. Alexandrov, L. Fursin, C. Dries, J.H. Zhao Trans Tech Publications
5 Conference Proceedings Fabrication and Characterization of 4H-SiC GTOs and Diodes Fursin, L., Tone, K., Alexandrov, P., Luo, Y., Cao, L., Zhao, J., Weiner, M., Pan, M. Trans Tech Publications	11 Conference Proceedings 2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes Li, Y., Fursin, L., Wu, J., Alexandrov, P., Zhao, J.H. Trans Tech Publications
6 Conference Proceedings 5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application J. Hu, L.X. Li, P. Alexandrov, X.H. Wang, J.H. Zhao Trans Tech Publications	12 Conference Proceedings 4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile J.H. Zhang, L. Fursin, X.Q. Li, X.H. Wang, J.H. Zhao Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12