SiC and GaN High-Voltage Power Switching Devices
- Author(s):
- Chow, T. P.
- Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(2)
- Pub. Year:
- 2000
- Page(from):
- 1155
- Page(to):
- 1160
- Pages:
- 6
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor
Trans Tech Publications |
Materials Research Society |
8
Conference Proceedings
Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)
Trans Tech Publications |
Electrochemical Society |
9
Conference Proceedings
Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
11
Conference Proceedings
Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
Trans Tech Publications |