Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal
- Author(s):
Purser, D. Jenkins, M. Lieu, D. Vaccaro, F. Faik, A. Hasan, M. -A. Leamy, H. J. Carlin, C. Sardela, M. R. Jr. Zhao, Q. Willander, M. Karlsteen, M. - Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(1)
- Pub. Year:
- 2000
- Page(from):
- 313
- Page(to):
- 316
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
4
Conference Proceedings
Hydrogen Passivation of Be-Acceptors in AlGaAs/GaAs Quantum-Well Structures
MRS - Materials Research Society |
10
Conference Proceedings
Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
Trans Tech Publications |
5
Conference Proceedings
Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |