Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
- Author(s):
- Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(1)
- Pub. Year:
- 2000
- Page(from):
- 161
- Page(to):
- 164
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
The Impact of Pregrowth Conditions and Substrate Polytype on SiC Epitaxial Layer Morphology
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
Elimination of BPD in 5sim;30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor
Trans Tech Publications |
5
Conference Proceedings
Structural Characterization of Thick GaN Films Grown by Hydride Vapor Phase Epitaxy
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
12
Conference Proceedings
CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
Trans Tech Publications |