Growth of 3C SiC Single Crystals from Convection Dominated Melts
- Author(s):
- Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(1)
- Pub. Year:
- 2000
- Page(from):
- 119
- Page(to):
- 124
- Pages:
- 6
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
Trans Tech Publications |
9
Conference Proceedings
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |