Characterization Of n-Type Layer By S+ Ion Implantation In 4H-SiC

Characterization Of n-Type Layer By S+ Ion Implantation In 4H-SiC

Author(s):

Tanaka, Yasunori

Publication title:

Wide-bandgap electronic devices

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

622

Pub. Year:

2001

Page(from):

T8.6

Pub. info.:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

Language:

English

Call no.:

M23500/622

Type:

Conference Proceedings

Details

TDL ID:	ZA00014208
Series ID:	PA00000011
Conf. info. (Name):	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
Conf. info. (Number):	2000
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.04.24-2000.04.27

Similar Items:

1 Conference Proceedings Electrical and Structural Properties of Al and B Implanted 4H-SiC Tanaka, Y., Kobayashi, N., Okumura, H., Suzuki, R., Ohdaira, T., Hasegawa, M., Ogura, M., Yoshida, S., Tanoue, H. Trans Tech Publications	7 Conference Proceedings Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching Henkel, T., Ferro, G., Nishizawa, S., Pressler, H., Tanaka, Y., Tanoue, H., Kobayashi, N. Trans Tech Publications
2 Conference Proceedings FORMATION OF SiGe AND SiGeC LAYERS ON Si BY Ge AND C ION IMPLANTATION AND SUBSEQUENT ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION Kobayashi, Naoto, Hasegawa, Masataka, Phillips, J. R., Hayashi, Nobuyuki, Tanoue, Hisao, Shibata, Hajime, Makita, … MRS - Materials Research Society	8 Conference Proceedings Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing Tanaka, Y., Tanoue, H., Arai, K. Trans Tech Publications
3 Conference Proceedings Coimplantation Effects of (C and Si)/Ga in 6H-SiC Tanaka, Y., Kobayashi, N., Hasegawa, M., Ogura, M., Ishida, Y., Yoshida, S., Okumura, H., Tanoue, H. Trans Tech Publications	9 Conference Proceedings Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing Tanaka, Y., Tanoue, H., Arai, K. Trans Tech Publications
4 Conference Proceedings Hot-Implantation of Phosphorus Ions into 4H-SiC Imai, S., Kobayashi, S., Shinohe, T., Fukuda, K., Tanaka, Y., Senzaki, J., Tanoue, H., Kobayashi, N., Okushi, H. Trans Tech Publications	10 Conference Proceedings Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing Tanaka, Y., Tanoue, H., Arai, K. Trans Tech Publications
5 Conference Proceedings Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H., Arai, K. Trans Tech Publications	11 Conference Proceedings ION BEAM INDUCED CRYSTALLIZATION IN PREAMORPHIZED BP(100) Kobayashi, Naoto, Kobayashi, Hisao, Tanoue, Hisao, Hayashi, Nobuyuki, Kumashiro, Yukinobu Materials Research Society
6 Conference Proceedings The Characterization of SiC Hot-Implanted with Ga+ Tanaka,Y., Kobayashi,N., Hasegawa,M., Yoshida,S., Ishida,Y., Nishijima,T., Hayashi,N. Trans Tech Publications	12 Conference Proceedings Scandium and Gallium Implantation Doping of Silicon Carbide Henkel, T., Tanaka, Y., Kobayashi, N., Koutzarov, I., Okumura, H., Yoshida, S., Ohshima, T. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12